• DocumentCode
    3749355
  • Title

    An integrated X-band FMCW radar transceiver in 130-nm CMOS technology

  • Author

    T Aditya Chowdary;Gaurab Banerjee

  • Author_Institution
    Indian Institute of Science, Cypress Semiconductor, Bangalore, India
  • fYear
    2015
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 × 716 μm2.
  • Keywords
    "Radar","Voltage-controlled oscillators","Transceivers","Receivers","Frequency modulation","Mixers","Radio frequency"
  • Publisher
    ieee
  • Conference_Titel
    MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
  • Electronic_ISBN
    2377-9152
  • Type

    conf

  • DOI
    10.1109/IMaRC.2015.7411385
  • Filename
    7411385