Title :
An integrated X-band FMCW radar transceiver in 130-nm CMOS technology
Author :
T Aditya Chowdary;Gaurab Banerjee
Author_Institution :
Indian Institute of Science, Cypress Semiconductor, Bangalore, India
Abstract :
A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 × 716 μm2.
Keywords :
"Radar","Voltage-controlled oscillators","Transceivers","Receivers","Frequency modulation","Mixers","Radio frequency"
Conference_Titel :
MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
Electronic_ISBN :
2377-9152
DOI :
10.1109/IMaRC.2015.7411385