DocumentCode
3749355
Title
An integrated X-band FMCW radar transceiver in 130-nm CMOS technology
Author
T Aditya Chowdary;Gaurab Banerjee
Author_Institution
Indian Institute of Science, Cypress Semiconductor, Bangalore, India
fYear
2015
Firstpage
151
Lastpage
154
Abstract
A fully integrated low power X-band radar transceiver in 130 nm CMOS process is presented. The highly integrated sub-system includes a low-noise amplifier (LNA), a voltage buffer, a down-conversion mixer, a low pass filter (LPF), a voltage controlled oscillator (VCO), a VCO buffer and two power amplifier (PA) drivers. The receiver provides a voltage conversion gain of 10 dB. The output power of the transmitter including the PA is -2 dBm. The total DC power consumption of the transceiver is 36 mW from a 1.2 V supply and the size of the chip is 670 × 716 μm2.
Keywords
"Radar","Voltage-controlled oscillators","Transceivers","Receivers","Frequency modulation","Mixers","Radio frequency"
Publisher
ieee
Conference_Titel
MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
Electronic_ISBN
2377-9152
Type
conf
DOI
10.1109/IMaRC.2015.7411385
Filename
7411385
Link To Document