Title :
Effects of contact roughness and trapped free space on characteristics of RF-MEMS capacitive shunt switches
Author :
Ali Ghaffari Nejad;Javad Yavand Hasani
Author_Institution :
School of Electrical Engineering, Iran University of Science and Technology
Abstract :
Down-state capacitance of RF-MEMS switches is considerably affected by the interface irregularities and the free space trapped between the contacting surfaces of a MEMS switch. Self-affine fractal model can be used to describe different growth and deposition techniques like thermal evaporation and MBE. Based on this concept, we have developed a model that incorporates effects of the trapped free space into classic equations describing electro-mechanical behavior of a capacitive MEMS switch.
Keywords :
"Capacitance","Microswitches","Rough surfaces","Surface roughness","Contacts","Mathematical model","Dielectrics"
Conference_Titel :
MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
Electronic_ISBN :
2377-9152
DOI :
10.1109/IMaRC.2015.7411414
