DocumentCode
3749392
Title
Design of tri-band ENZ SIW sensor for microwave testing of materials in 3G and 4G GSM bands
Author
Abhishek Kumar Jha;M. Jaleel Akhtar
Author_Institution
Department of Electrical Engineering, Indian Institute of Technology Kanpur, India-208016
fYear
2015
Firstpage
68
Lastpage
71
Abstract
This paper presents a novel tri-band epsilon-near-zero (ENZ) substrate integrated waveguide (SIW) based microwave sensor for microwave material testing at global system for mobile communications (GSM) bands. The prototype RF sensor is designed, simulated, and tested for the microwave characterization of materials in 3G and 4G frequency bands. The proposed design provides a substantial reduction in the sensor size, and facilitates complex permittivity measurement at multiple frequencies with reasonable sensitivity as compared to the conventional SIW based sensors. The device is fabricated using multiple layers of FR4 substrate, and the RF signal is coupled using SMA connectors which is then tested for various reference samples. The measured data are found to be in good agreement with their reference values thus validating the proposed design methodology.
Keywords
"Frequency measurement","Microwave communication","Cavity resonators","Tunneling","Electric fields"
Publisher
ieee
Conference_Titel
MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
Electronic_ISBN
2377-9152
Type
conf
DOI
10.1109/IMaRC.2015.7411422
Filename
7411422
Link To Document