• DocumentCode
    3749421
  • Title

    Device characterization and modeling for Terahertz CMOS design

  • Author

    Minoru Fujishima

  • Author_Institution
    Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-hiroshima, Japan
  • fYear
    2015
  • Firstpage
    361
  • Lastpage
    364
  • Abstract
    More and more CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies have been reported recently. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews our recent progress in device characterization and modeling for terahertz CMOS design. Finally, as an application example of terahertz CMOS design, low-power high-speed wireless data transfer at 11 Gb/s and 20 pJ and a 7-pJ/bit ultra-low-power transceiver chipset are presented.
  • Keywords
    "CMOS integrated circuits","Wireless communication","Amplitude shift keying","Integrated circuit modeling","Transceivers","Semiconductor device modeling","MOSFET"
  • Publisher
    ieee
  • Conference_Titel
    MTT-S International Microwave and RF Conference (IMaRC), 2015 IEEE
  • Electronic_ISBN
    2377-9152
  • Type

    conf

  • DOI
    10.1109/IMaRC.2015.7411451
  • Filename
    7411451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749421