Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.