• DocumentCode
    3749447
  • Title

    Less resistance path in inhomogeneous insulating thin films

  • Author

    G. Gevers;A.S. Barriere

  • Author_Institution
    Groupe de Recherche en Physique pour la Microé
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    143
  • Lastpage
    148
  • Abstract
    Altogether, the measurements lead us to consider the grain boundaries as the seat of the electronic localized states which are responsible for the dc charge transfer and for the polarizability of FeF3 thin films. The density of these states increases in the intergranular zones with the degree of crystallization of the samples but, at the same time, the barriers separating two consecutive sites become increasingly uniform. For high temperatures, the electrical charge transfer corresponds to a Poole effect whereas for low temperatures a hopping process is observed.
  • Keywords
    "Erbium","Nickel","Electric potential"
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, Proceedings of First International Conference on
  • Type

    conf

  • DOI
    10.1109/ICSD.1983.7411499
  • Filename
    7411499