• DocumentCode
    3749502
  • Title

    Influence of processing conditions on breakdown and charge build-up in thin siO2 gate dielectrics

  • Author

    M.W. Hillen;I.S. Darakchiev;R.F. De Keersmaecker

  • Author_Institution
    ESAT laboratory, Katholieke Universiteit Leuven, Kardinaal Mercierlaan 94, B-3030 Heverlee, Belgium
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    443
  • Lastpage
    447
  • Abstract
    SiO2 layers on Si with extremely low defect densities have been grown in a double-walled oxidation tube. The use of a chlorinated gas in the outer tube, the increase of 02 flow in the inner tube and the use of polysilicon electrodes all improve the maximum breakdown fields.
  • Keywords
    "Electron traps","Logic gates","Silicon","Voltage measurement","Annealing","Magnetomechanical effects","Lithography"
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, Proceedings of First International Conference on
  • Type

    conf

  • DOI
    10.1109/ICSD.1983.7411555
  • Filename
    7411555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749502