• DocumentCode
    3749675
  • Title

    Developing graphene based MMICs on SiC substrate

  • Author

    O. Habibpour;N. Rorsman;H. Zirath

  • Author_Institution
    Chalmers University of Technology, SE-412 96, Gothenburg, Sweden
  • Volume
    1
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.
  • Keywords
    "Graphene","MMICs","Substrates","Microwave amplifiers","Microwave circuits","Microwave FET integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7411745
  • Filename
    7411745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3749675