Title :
Cryogenic low noise amplifiers in an InP HEMT MMIC process
Author :
P. ?. Nilsson;A. Pourkabirian;J. Schleeh;N. Wadefalk;J. P. Starski;G. Alestig;J. Halonen;B. Nilsson;H. Zirath;J. Grahn
Author_Institution :
Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 412 96 Gothenburg, Sweden
Abstract :
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4" wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
Keywords :
"HEMTs","Indium phosphide","III-V semiconductor materials","Cryogenics","MMICs","Logic gates"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7411746
