Title :
Post cleaning and defect reduction for tungsten chemical mechanical planarization
Author :
Wei-Tsu Tseng;James Hagan;Kaushik Mohan;Ricky Hull;James MacDougall;Richard Murphy;Steven Molis; Leo Tai
Author_Institution :
Advanced Technology Development, GlobalFoundries, Hopewell Junction, NY 12533, USA
Abstract :
Effects of clean chemical pH on PR/FM and HM defects for W-CMP are examined. Oxalic acid, DIW, and a QAC-based basic chemicals are evaluated for their PR/FM cleaning performance and hollow metal generation. Basic clean chemistry is demonstrated to be more efficient for PR/FM removal but more prone to HM defects. AFM and XPS surface analyses conducted on post W-CMP wafers help discern the cleaning mechanism for W-CMP.
Keywords :
"Tungsten","Chemicals","Rough surfaces","Surface roughness","Brushes","Slurries","Inspection"
Conference_Titel :
Planarization/CMP Technology (ICPT), 2015 International Conference on
