Optimization of CO2 bubbling (carbonation) for post CMP cleaning process

Semiconductor manufacturing process is gradually being shrunk, and defects from the CMP process can have more significant effects on the wafer yield than in the past, therefore cleaning progresses, by brush cleaning and jet-spray cleaning, are important to remove residues after CMP process. In particular, it is possible to prevent static electricity damages on the wafer by using CO₂ mixed jet-spray and as well to remove residues. But the excessive CO₂ mixed jet-spray can weaken the force of jet-spray, exactly particle removal efficiency decreases. Although excessive CO₂ mixed jet-spray can reduce wafer damages caused by static electricity, it may leave residues on the key pattern, that residues make some particles in the subsequent processes. We focused on the best condition of CO₂ bubbling amount for jet-spray, as a result, we can get the solution to remove residues and to prevent static electricity damages simultaneously. In conclusion we can improve the quality of CMP in-situ wet cleaning jet-spray.