DocumentCode
3750274
Title
3D integration technology using W2W direct bonding and TSV for CMOS based image sensors
Author
Nga. P. Pham;Nina Tutunjyan;Danny Volkaerts;Lan Peng;Geraldine Jamison;Deniz Sabuncuoglu Tezcan
Author_Institution
Imec, Kapeldreef 75, B-3001 Leuven, Belgium
fYear
2015
Firstpage
1
Lastpage
5
Abstract
This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.
Keywords
"Bonding","Etching","Silicon","Metals","Filling","Three-dimensional displays"
Publisher
ieee
Conference_Titel
Electronics Packaging and Technology Conference (EPTC), 2015 IEEE 17th
Type
conf
DOI
10.1109/EPTC.2015.7412378
Filename
7412378
Link To Document