Title :
Very high conversion gain microwave frequency doubler circuit design
Author :
Huang, Bob Y. ; Branner, G.R.
Abstract :
This paper focuses on the design and fabrication of frequency doublers operating in the RF and microwave frequency ranges. A single PHEMT transistor is employed in a new approach which has resulted in conversion gains of 10 dB or greater. This is a significant improvement over previous realizations
Keywords :
HEMT circuits; UHF frequency convertors; frequency multipliers; microwave frequency convertors; 10 dB; 6.3 GHz; PHEMT; RF frequency doubler; frequency doubler circuit design; microwave frequency doubler circuit; pseudomorphic HEMT; very high conversion gain doubler; Circuit synthesis; Fabrication; Frequency conversion; Gain; Microwave frequencies; Microwave transistors; PHEMTs; Power harmonic filters; Power system harmonics; Radio frequency;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.951578
