A novel III-V/Si Chip-on-Wafer Direct Transfer Bonding technology

Three-Dimensional (3D) integration of group III-V compound semiconductor material on Si wafer (III-V/Si) is important for next-generation microsystems such as Si photonics or ultra-high-frequency electronics. A technique for direct bonding of III-V chips on a large-diameter Si wafer is an attractive approach for manufacturing these structures, but there is a difficulty in that ultra-clean particle-free surface is required during the III-V wafer dicing and diced chip bonding processes. Therefore, we proposed a new "Chip-on-Wafer Direct Transfer Bonding" (CoW DTB) technology for this purpose, and also developed new equipment for this technology. The processes were evaluated using AlGaInAs/InP Multiple Quantum Well (MQW) epitaxial wafer and Si wafer on which oxide film is deposited, and high-quality bonding was confirmed by Transmission Electron Microscopy (TEM) observation.