Title :
Performance analysis of graphene based transistors: Modelling and simulation
Author :
Rohit Patel;K. M. Begam
Author_Institution :
Department of Electrical and Electronic Engineering, University of Nottingham Malaysia campus, Jalan Broga, Semenyih, Selangor, Malaysia
Abstract :
Graphene Nanoribbon FETs and Graphene Nanoribbon Tunnel FETs channel current models are simulated in MATLAB followed by implementation in PSpice as equivalent circuit models. Several characteristics of these transistors are compared to those of MOSFETs, keeping identical gate length of 20 nm for performance analysis. Based on the simulation results, it is found that graphene based transistors exhibit superior performance compared to MOSFETs.
Keywords :
"Graphene","Mathematical model","Field effect transistors","Logic gates","Integrated circuit modeling","Capacitance"
Conference_Titel :
System Engineering and Technology (ICSET), 2015 5th IEEE International Conference on
DOI :
10.1109/ICSEngT.2015.7412441
