Title :
On design of narrow-band low-noise amplifiers with inductive source degeneration
Author :
Filanovsky, I.M.
Author_Institution :
Alberta Univ., Edmonton, Alta., Canada
Abstract :
The stage of inductively degenerated common-source amplifier is widely used in narrow-band amplifiers. The noise performance of this stage can be optimized for the noise model that is valid in the range of RF frequencies, and that includes drain and gate correlated noise sources. A ten-step design procedure is given. It results in the circuit with optimal noise figure. An example of design is given. The feasibility of further optimization connected with fixed power dissipation is discussed
Keywords :
circuit noise; circuit optimisation; radiofrequency amplifiers; RF frequencies; design; drain; fixed power dissipation; gate correlated noise sources; inductively degenerated common source amplifier; narrow-band amplifiers; noise model; noise performance; optimal noise figure; optimisation; Circuit noise; Impedance; Inductance; Low-noise amplifiers; MOSFETs; Narrowband; Noise figure; Radio frequency; Radiofrequency amplifiers; Resonant frequency;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.951588
