A novel extrinsic parameter extraction method for the technology independent modeling of transistors

A novel extrinsic parameter extraction approach is presented for the technology independent modeling of transistors. For the first time, the extrinsic parasitic parameters are optimized based on the conservation of the internal current and charge-sources, which ensures the contour integration of de-embedded intrinsic parameters path independent. A large signal model of a 4 × 100um gate width InGaAs pHEMT has been built to verify this novel method. Excellent results are achieved for its modeling performances of S-parameters, harmonics, and large signal time domain input/output waveforms, which indicate the success of this novel extraction method.