Title :
A 200 GHz driver amplifier in metamorphic HEMT technology
Author :
B. Amado-Rey;Y. Campos-Roca;S. Maroldt;A. Tessmann;H. Massler;A. Leuther;M. Schlechtweg;O. Ambacher
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics (IAF), Tulllastrasse 72, 79108 Freiburg, Germany
Abstract :
A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE). This monolithic microwave integrated circuit (MMIC) is realized in grounded coplanar waveguides (GCPW) technology in conjunction with a 35 nm gate length metamorphic high electron mobility transistor technology (mHEMT). The four-stage driver amplifier provides more than 20 dB linear gain between 180 GHz and 270 GHz (40 % bandwidth) and PAE higher than 3.3% with more than 7.4 dBm saturated output power at 200 GHz.
Keywords :
"Decision support systems","Microwave circuits","Gain","MMICs","Conferences"
Conference_Titel :
Microwave Conference (APMC), 2015 Asia-Pacific
Print_ISBN :
978-1-4799-8765-8
DOI :
10.1109/APMC.2015.7413203
