0.05–2.5GHz wideband RF front-end exploiting noise cancellation and multi-gated transistors

A wideband receiver RF front-end, including a noise cancellation low-noise amplifier (LNA) and quadrature active mixers with multi-gated transistors (MGTR), is presented in this paper. The proposed front-end was fabricated in 180-nm CMOS technology, covering the input frequency range of 0.05 to 2.5 GHz and IF frequency of 0.3 to 20 MHz. It achieves conversion gain of 22.2-30.8 dB, double-sideband noise figure (NF) of 2.7-4.5 dB and input-referred third-order intercept point (HP3) of -17.7 dBm. The chip core draws 22 mA from a 1.8V supply with a die area of 1.36 mm².