2.4-5.8 GHz CMOS LNA´s using integrated inductors

Author

Rafla, Ramez A. ; El-Gamal, Mourad N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

Volume

1

fYear

2000

fDate

2000

Firstpage

302

Abstract

Three 2-3 V-supply LNA´s were designed in 0.35 μm and 0.25 μm digital CMOS processes, for center frequencies of 2.4, 3, and 5.8 GHz. The circuits´ components are fully-integrated making them suitable for integration into a complete transceiver. The measured forward transmissions S21 for the 2.4 and 3 GHz LNA´s are 6.5 and 8 dB respectively, at relatively low power consumption of 20 mW, when excluding the output stages. The noise figures achieved are 2.5 and 3 dB respectively. Simulation of the 5.8 GHz LNA yielded 10 dB of forward gain and 3 dB of noise figure, at 20 mW of power consumption

Keywords

CMOS analogue integrated circuits; inductors; integrated circuit noise; low-power electronics; radiofrequency amplifiers; 0.25 micron; 0.35 micron; 10 dB; 2.4 to 5.8 GHz; 2.5 dB; 20 mW; 3 dB; CMOS LNA; RFIC; S21 forward transmission; circuit simulation; forward gain; integrated inductor; noise figure; power consumption; transceiver; CMOS process; Impedance; Inductors; Integrated circuit measurements; Noise figure; Q factor; Radio frequency; Resonance; Semiconductor device modeling; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on

Conference_Location

Lansing, MI

Print_ISBN

0-7803-6475-9

Type

conf

DOI

10.1109/MWSCAS.2000.951647

Filename

951647