An enhanced AlGaN/GaN HEMTs large-signal model with parameter extraction methodology

An analytical large-signal model with improved drain current functions and a new parameter extraction methodology for high power Gallium Nitride(GaN) High-Electron Mobility Transistors (HEMTs) are presented in this paper. The new I-V functions can accurately model the drain current and non-bell-shaped transconductance. The key point of the proposed parameter extraction methodology is first to determine the ratio of two nonlinear Ids-Vgs measurements and give an accurate description of saturated points of drain current. This is very important for circuits working at small or negative drain-source voltages like resistive mixers or switches. All aspects of this method are validated for 1.05mm gate-width GaN HEMT processes. Excellent agreement between the measurement and simulation is obtained, showing validity of our presented method.