• DocumentCode
    3750709
  • Title

    Device level model for trapping effects in GaN and GaAs devices for broadband data communication

  • Author

    G. Rafael-Valdivia;Zhiguo Su;Anthony Urquizo;Thalia Mendoza

  • Author_Institution
    P.P. Ing. Software. Universidad La Salle, Perú
  • Volume
    2
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, we propose a new non-linear equivalent circuit which is able to model the low frequency dispersion phenomena caused by the trapping effects in GaAs and GaN devices. Large signal pulsed measurements were used to extract the new model.
  • Keywords
    "Pulse measurements","Transistors","Integrated circuit modeling","Gallium nitride","Mathematical model","Radio frequency","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413228
  • Filename
    7413228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750709