• DocumentCode
    3750851
  • Title

    A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

  • Author

    Hamed Alsuraisry;Jen-Hao Cheng;Shih-Jyun Luo;Wen-Jie Lin;Jeng-Han Tsai;Tian-Wei Huang

  • Author_Institution
    Kmg Abdulaziz city for Science and Technology (KACST), Kingdom of Saudi Arabia
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.
  • Keywords
    "CMOS integrated circuits","Transistors","Power generation","Semiconductor device measurement","CMOS technology","Logic gates","Scattering parameters"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413434
  • Filename
    7413434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750851