• DocumentCode
    3750974
  • Title

    Low-Pressure-Chemical-Vapor-Deposition SiNx passivated AlGaN/GaN HEMTs for power amplifier application

  • Author

    Tongde Huang;Olle Axelsson;Anna Malmros;Johan Bergsten;Sebastian Gustafsson;Mattias Thorsell;Niklas Rorsman

  • Author_Institution
    Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE 412 96 Goteborg, Sweden
  • Volume
    3
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (<;6%). These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have highest output power (2.9 W/mm at 3 GHz).
  • Keywords
    "HEMTs","MODFETs","Passivation","Aluminum gallium nitride","Wide band gap semiconductors","Power amplifiers","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (APMC), 2015 Asia-Pacific
  • Print_ISBN
    978-1-4799-8765-8
  • Type

    conf

  • DOI
    10.1109/APMC.2015.7413558
  • Filename
    7413558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3750974