DocumentCode
3751807
Title
Towards 3-D carbon-based heterogeneous interconnects
Author
Jie Zheng;Xu-Chen Wang;Wen-Sheng Zhao;Gaofeng Wang;Wen-Yan Yin;Lingling Sun
Author_Institution
Key Lab of RF Circuits and Systems of Ministry of Education, Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou 310018, China
fYear
2015
Firstpage
1
Lastpage
3
Abstract
In this paper, the carbon-based interconnects such as the horizontal multilayer graphene (MLG) interconnects and the vertical carbon nanotube through-silicon vias (CNT TSV) are investigated. Based on the equivalent circuit model, the electrical performance of these carbon-based interconnects are studied. Furthermore, by combining them, one novel carbon-based 3-D interconnect is presented and studied. The heterogeneous structures are also proposed in order to exploit these nano-materials efficiently. It is shown that the Cu-graphene heterogeneous interconnects and Cu/CNT composite TSVs could be utilized to improve the reliability of future 3-D ICs.
Keywords
"Integrated circuit interconnections","Through-silicon vias","Resistance","Integrated circuit modeling","Graphene","Inductance","Impedance"
Publisher
ieee
Conference_Titel
Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), 2015 IEEE MTT-S International Conference on
Type
conf
DOI
10.1109/NEMO.2015.7414997
Filename
7414997
Link To Document