Efficient small-signal extraction technique for ultra-thin body and ultra-thin box FD-SOI transistor

In this paper, an efficient extraction technique is proposed for determining all extrinsic and intrinsic element values of SOI-UTBB transistors. Starting from measured S-parameters and using simple Z- and Y-matrix transformations, the proposed technique exploits the independent gate resistance value under DC bias conditions to first extract the extrinsic elements values and then the intrinsic ones. The obtained results are verified through successful comparison between simulated and measured S-parameters up to 40GHz.