• DocumentCode
    3752294
  • Title

    Circuit influences on COMFET™ (IGT) dynamic latching current

  • Author

    Harold R. Ronan;C. Frank Wheatley

  • Author_Institution
    RCA Solid State Division, Mountaintop, PA 18707, United States
  • fYear
    1986
  • fDate
    6/1/1986 12:00:00 AM
  • Firstpage
    73
  • Lastpage
    80
  • Abstract
    Terminal measurements are made to verify that latching varies with gate drive resistance and occurs during turn off. dv/dt is varied from 1600 to 300 V/us with no impact on latch. A time-displaced turn-off current pulse demonstrates that latching occurs at very low drain voltages, suggesting a tailored gate drive. A brief discussion of device structure explains the observations.
  • Keywords
    "Logic gates","Latches","Compounds","Field effect transistors","Anodes","Conductivity","Object recognition"
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1986 17th Annual IEEE
  • ISSN
    0275-9306
  • Print_ISBN
    978-9-9963-2327-0
  • Type

    conf

  • DOI
    10.1109/PESC.1986.7415548
  • Filename
    7415548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752294