DocumentCode :
37526
Title :
Determination of Ultimate Leakage Through Rutile  \\hbox {TiO}_{2} and Tetragonal \\hbox {ZrO}_{2}
Author :
Clima, S. ; Kaczer, Ben ; Govoreanu, B. ; Popovici, Mihaela ; Swerts, Johan ; Verhulst, Anne S. ; Jurczak, Malgorzata ; De Gendt, Stefan ; Pourtois, G.
Author_Institution :
imec, Leuven, Belgium
Volume :
34
Issue :
3
fYear :
2013
fDate :
Mar-13
Firstpage :
402
Lastpage :
404
Abstract :
First-principle complex band structures have been computed for rutile TiO2 and tetragonal ZrO2 insulating materials that are of current technological relevance to dynamic random access memory metal-insulator-metal (MIM) capacitors. From the magnitude of the complex wave vectors in different orientations, the most penetrating orientations have been identified. Tunneling effective masses mtunnel have been extracted, are shown to be a crucial parameter for the intrinsic leakage, and are identified to be an important parameter in further scaling of MIM capacitors.
Keywords :
DRAM chips; MIM devices; ab initio calculations; capacitors; insulating materials; titanium compounds; tunnelling; zirconium compounds; TiO2; ZrO2; ab initio complex band calculations; complex band structures; complex wave vectors; dynamic random access memory; intrinsic leakage; metal-insulator-metal capacitors; rutile insulating materials; tetragonal insulating materials; tunneling effective mass; ultimate leakage; Dielectrics; Effective mass; MIM capacitors; Materials; Random access memory; Tunneling; $ hbox{ZrO}_{2}$; $hbox{TiO}_{2}$ ; Imaginary bands; tunneling effective mass;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2238885
Filename :
6425405
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