Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)

To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements.