Effects of deposition temperature on the structural, optical, and electrical properties of hydrogenated of Ga-doped ZnO film

GZO thin films were prepared on a glass substrate by dc magnetron sputtering with hydrogen at various deposition temperatures (T_d). As a result of the incorporation of hydrogen atoms that acted as shallow donors, the carrier concentration of each film initially increased when T_d increased from 25 °C to 175 °C but then decreased as T_d further increased. Film mobility and carrier concentration exhibited the similar trend with deposition temperature. The lowest resistivity, 8.1 × 10^-4 Ω cm, was obtained for the film grown at 175 °C, which has a carrier concentration of 1.1 × 10²¹ cm^-3.