DocumentCode :
3752656
Title :
Emission wavelength selection for InGaAs quantum dots by anodic-aluminum-oxide membrane
Author :
T. S. Lay;J. Y. Hsing;K. Y. Chuang;T. E. Tzeng;K. L. Yang
Author_Institution :
Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Anodic-aluminum-oxide (AAO) membranes are fabricated and bonded on the surface of self-assembled InGaAs quantum dots (QDs) samples. The photoluminescence peak wavelengths for the QDs samples are fixed, and the optical intensity is enhanced from the photonic-crystal radiation modes of the AAO periodic nano-hole array.
Keywords :
"Indium gallium arsenide","Quantum dots","Surface waves","Optical surface waves","Photonic crystals","Filtering"
Publisher :
ieee
Conference_Titel :
Microoptics Conference (MOC), 2015 20th
Print_ISBN :
978-4-8634-8487-0
Type :
conf
DOI :
10.1109/MOC.2015.7416435
Filename :
7416435
Link To Document :
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