Title :
Characterization of ion implantation quantum well intermixing for carrier confinement of VCSEL
Author :
Shouhei Moriwaki;Minora Saitou;Shougo Kunisada;Tomoyuki Miyamoto
Author_Institution :
Photonics Integration System Research Center, Precision and Intelligence Lab., Tokyo Institute of Technology 4259-R2-39 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Abstract :
The quantum well intermixing (QWI) using a proton implantation was investigated. The PL energy shift showed peak at certain proton dose density. High In composition in QW showed increased energy shift. The proton implantation QWI showed large recovery of PL intensity in comparison with the QWI using SiO2. The QWI will be applied to the carrier confinement of the VCSEL.
Keywords :
"Vertical cavity surface emitting lasers","Protons","Ion implantation","Carrier confinement","Crystals","Optical interconnections","Light sources"
Conference_Titel :
Microoptics Conference (MOC), 2015 20th
Print_ISBN :
978-4-8634-8487-0
DOI :
10.1109/MOC.2015.7416477
