• DocumentCode
    3752697
  • Title

    Characterization of ion implantation quantum well intermixing for carrier confinement of VCSEL

  • Author

    Shouhei Moriwaki;Minora Saitou;Shougo Kunisada;Tomoyuki Miyamoto

  • Author_Institution
    Photonics Integration System Research Center, Precision and Intelligence Lab., Tokyo Institute of Technology 4259-R2-39 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The quantum well intermixing (QWI) using a proton implantation was investigated. The PL energy shift showed peak at certain proton dose density. High In composition in QW showed increased energy shift. The proton implantation QWI showed large recovery of PL intensity in comparison with the QWI using SiO2. The QWI will be applied to the carrier confinement of the VCSEL.
  • Keywords
    "Vertical cavity surface emitting lasers","Protons","Ion implantation","Carrier confinement","Crystals","Optical interconnections","Light sources"
  • Publisher
    ieee
  • Conference_Titel
    Microoptics Conference (MOC), 2015 20th
  • Print_ISBN
    978-4-8634-8487-0
  • Type

    conf

  • DOI
    10.1109/MOC.2015.7416477
  • Filename
    7416477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752697