Investigation of analog/RF performance of gate-all-around junctionless MOSFET including interfacial defects

In this paper, an analytical drain current model for cylindrical gate-all-around junctionless GAAJ MOSFET including the interfacial hot-carrier degradation effects is presented. A quantitative study of analog/RF parameters like transconductance, cut-off frequency, drain current drivability and voltage gain has been carried out to investigate the overall analog/RF device performance degradation due to the hot carrier induced damage in the form of localized/fixed charges at the semiconductor/oxide interface. Based on the obtained results, we have found that the degradation of the drain current, transconductance, gain and cutoff frequency tends to be important with increasing of the interface charge densities, which can degrade strongly the device reliability for analog/RF applications. Our obtained results showed that the analytical model is in close agreement with the 2-D numerical simulation over a wide range of device parameters.