• DocumentCode
    3752977
  • Title

    DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT

  • Author

    Zine-eddine Touati;Zahra Hamaizia;Zitouni Messai

  • Author_Institution
    Electrical Engineering Department, Faculty of Sciences and Technology, University of Biskra, Algeria
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, Al2O3 AlGaN/GaN MOS-HEMTs and HEMTs grown on Silicon substrate were successfully simulated. DC and RF characteristics were extracted. The AlGaN/GaN HEMT suffers from high leakage current. In order to solve this problem, a dielectric Al2O3 gate was applied to the device to suppress the high gate leakage current. The innovative MOS-HEMT technique reduces the leakage current.
  • Keywords
    "HEMTs","Logic gates","Aluminum gallium nitride","Wide band gap semiconductors","Aluminum oxide","Leakage currents","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2015 4th International Conference on
  • Type

    conf

  • DOI
    10.1109/INTEE.2015.7416850
  • Filename
    7416850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3752977