2-V, 1-GHz CMOS inductorless LNAs with 2-3dB NF

Author

Sharaf, Khaled

Author_Institution

Integrated Circuits Lab., Ain Shams Univ., Cairo, Egypt

Volume

2

fYear

2000

fDate

2000

Firstpage

714

Abstract

Two 1-GHz single-stage single-ended low noise amplifiers (LNAs), requiring one external inductor and matched to 50-Ohm at both the input and output, have been designed using a 0.5-μm CMOS technology. Both LNAs employ a cascode topology with a resistive pull-up load and with no on-chip inductor. The second topology uses an ac-coupled active-inductor load to provide more selectivity and reject the image channel. The LNAs have a gain greater than 10 dB at 1 GHz with a noise figure lower than 3 dB at a power dissipation of 17 mW from a 2 V supply. The inductor-less LNA has an IIP3 of -3.8 dBm compared to the active-inductor LNAs IIP3 of -21 dBm and their reverse isolation is higher than 45 dB

Keywords

CMOS integrated circuits; amplifiers; cascade networks; inductors; integrated circuit design; integrated circuit noise; microwave integrated circuits; network topology; 0.5 micron; 0.5-μm CMOS technology; 1 GHz; 10 dB; 17 mW; 2 V power supply; 2 to 3 dB; 2-3dB; 50 ohm; ac-coupled active-inductor load; active inductor design; cascode topology; external inductor; inductor-less LNA; low noise amplifiers; noise figure; power dissipation 17 mW; resistive pull-up load; Active inductors; Capacitance; Filters; Gyrators; Impedance; Linearity; Noise figure; Noise measurement; Spirals; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on

Conference_Location

Lansing, MI

Print_ISBN

0-7803-6475-9

Type

conf

DOI

10.1109/MWSCAS.2000.952856

Filename

952856