• DocumentCode
    375529
  • Title

    A process variation compensated comparator for FSK demodulators

  • Author

    Kim, Hong-Sun ; Yoo, Seoung-Jae ; Ismail, Mohammed ; Olsson, Helena

  • Author_Institution
    Radio Electron. Lab, R. Inst. of Technol., Kista, Sweden
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    940
  • Abstract
    An inverter based comparator design is presented. The comparator has inherently process variation compensated structure which makes the threshold voltage of the comparator independent of the process variation. The compensation structure consists of one additional inverter and four triode region operating transistors. The comparator is designed for FSK demodulation applications and simulated with 0.35 μm CMOS technology
  • Keywords
    CMOS analogue integrated circuits; comparators (circuits); demodulators; frequency shift keying; 0.35 micron; CMOS technology; FSK demodulation; inverter based comparator; mobile communication; process variation compensated structure; threshold voltage; triode region operating transistors; CMOS process; CMOS technology; Circuits; Demodulation; Energy consumption; Frequency shift keying; Inverters; MOSFETs; Robustness; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
  • Conference_Location
    Lansing, MI
  • Print_ISBN
    0-7803-6475-9
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2000.952908
  • Filename
    952908