Title :
A simplified analytical model for nonlinear distortion in RF bipolar circuits
Author :
Helmy, Ahmed ; Sharaf, Khaled ; Ragai, Hani
Author_Institution :
Integrated Circuit Lab., Ain Shams Univ., Cairo, Egypt
Abstract :
The nonlinear behavior of common-emitter (CE) and single-balanced BJT mixer (SBM) circuits is described by a simple closed-form interpretable analytical expression. The third-order intermodulation distortion (IM3) calculated by this approach is in good agreement with harmonic-balance results of an APLAC circuit simulator for different input signal level, biasing current, emitter degeneration and operating frequency range. In addition, the model can successfully identify the bias currents that lead to a minimum or maximum amount of distortion. Therefore, it provides an easy guideline for the designer to directly optimize the linearity performance among other conflicting performance parameters; gain, noise and power dissipation
Keywords :
UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; integrated circuit modelling; integrated circuit noise; intermodulation distortion; nonlinear network analysis; APLAC circuit simulator; RF bipolar circuits; bias currents; biasing current; closed-form interpretable analytical expression; common-emitter BJT mixer circuits; emitter degeneration; input signal level; linearity performance; nonlinear distortion; operating frequency range; power dissipation; simplified analytical model; single-balanced BJT mixer circuits; third-order intermodulation distortion; Analytical models; Circuit simulation; Design optimization; Guidelines; Intermodulation distortion; Linearity; Nonlinear distortion; Performance gain; Power dissipation; Radio frequency;
Conference_Titel :
Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
Conference_Location :
Lansing, MI
Print_ISBN :
0-7803-6475-9
DOI :
10.1109/MWSCAS.2000.952914
