• DocumentCode
    375538
  • Title

    Simulation of transient behavior of an EEPROM cell using a semi-quantum model for tunneling current

  • Author

    Harabech, N. ; Bouchakour, R. ; Canet, P. ; Autran, J.L. ; Pizzuto, O.

  • Author_Institution
    Lab. Materiaux et Microelectron. de Provence, IMT Technopole de Chateau Gombert, Marseille, France
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    992
  • Abstract
    A semi-quantum model of tunnel current through N-polysilicon/Oxide/N+-silicon structure is implemented in order to simulate transient behavior of an EEPROM memory cell. This model depends on the sheet charge, electron impact frequency on the interface and tunneling probability. A comparison of this model with Fowler-Nordheim model is given
  • Keywords
    EPROM; integrated circuit modelling; transient analysis; tunnelling; EEPROM memory cell; Fowler-Nordheim model; N-polysilicon/oxide/N+-silicon structure; Si-SiO2-Si; interfacial electron impact frequency; semi-quantum model; sheet charge; transient simulation; tunneling current; tunneling probability; Circuit simulation; EPROM; Electrons; Frequency; Nonvolatile memory; Semiconductor device modeling; Threshold voltage; Tunneling; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2000. Proceedings of the 43rd IEEE Midwest Symposium on
  • Conference_Location
    Lansing, MI
  • Print_ISBN
    0-7803-6475-9
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2000.952921
  • Filename
    952921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=375538