Title :
A GaAs MESFET transient model capable of predicting trap-induced memory effects under complex digital modulation
Author :
Wang, F. ; Jemison, W.D. ; Hwangy, J.C.M.
Author_Institution :
Dept. of ECE, Lafayette Coll., Easton, PA, USA
Abstract :
A transient model for GaAs MESFETs is presented that can predict distortion of digitally modulated carrier waveforms due to memory effects induced by both low-frequency dispersion and gate-lag. Experimental and simulated results are presented which demonstrate, for the first time, the successful prediction of these effects for multilevel pulse modulated waveforms.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; hole traps; modulation; semiconductor device models; transient analysis; GaAs; GaAs MESFET transient model; complex digital modulation; digitally modulated carrier waveforms; gate-lag; low-frequency dispersion; multilevel pulse modulated waveforms; trap-induced memory effects prediction; waveform distortion; Digital modulation; Gallium arsenide; MESFETs; Nonlinear distortion; Predictive models; Pulse modulation; Radio control; Radio frequency; Semiconductor process modeling; Voltage control;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967016
