A high efficiency 0.25 /spl mu/m CMOS PA with LTCC multi-layer high-Q integrated passives for 2.4 GHz ISM band

Author

Heo, D. ; Sutono, A. ; Chen, E. ; Gebara, E. ; Yoo, S. ; Suh, Y. ; Laskar, J. ; Dalton, E. ; Tentzeris, E.M.

Author_Institution

Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

915

Abstract

We present the first high efficiency CMOS power amplifier utilizing fully integrated multi-layer Low Temperature Co-fired Ceramic (LTCC) high-Q passives for 2.4 GHz ISM band applications. The inductor and capacitor library was built in a multi-layer LTCC board using a compact topology. An inductor Q-factor as high as 110 with a self-resonant-frequency (SRF) as high as 12 GHz was demonstrated. Measured results of the CMOS-LTCC PA show 45% power added efficiency, 23 dBm output power and 18 dB gain at 2.4 GHz with a low 2.5 V drain supply voltage. This result is the first significant step toward a compact transceiver module development utilizing fully integrated multi-layer LTCC high-Q passives and a deep submicron (0.25 /spl mu/m) CMOS technology.

Keywords

CMOS analogue integrated circuits; Q-factor; UHF integrated circuits; UHF power amplifiers; capacitors; inductors; power integrated circuits; 0.25 micron; 18 dB; 2.4 GHz; 2.5 V; 45 percent; CMOS power amplifier; ISM band applications; LTCC multi-layer passives; Q-factor; compact transceiver module development; deep submicron CMOS technology; high efficiency power amplifier; high-Q integrated passives; low temperature co-fired ceramic passives; CMOS technology; Capacitors; Ceramics; High power amplifiers; Inductors; Libraries; Power measurement; Q factor; Temperature; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967040

Filename

967040