Title :
Fullwave analysis of transverse and longitudinal couplings in silicon RFIC. Effect of buried diffusions
Author :
Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P.
Author_Institution :
ENSEEIHT, Toulouse, France
Abstract :
Couplings in Si based RFICs result from the combination of the effects of the substrate resistivity, homogenous and localized buried diffusions as well as metallic losses. A fullwave analysis is performed and longitudinal and transverse coupling coefficients are defined from a generalized equivalent circuit. Concurrently, considerable improvement of isolation performances are demonstrated by inserting localized buried diffusions.
Keywords :
UHF integrated circuits; coupled transmission lines; diffusion barriers; doping profiles; elemental semiconductors; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; isolation technology; microstrip lines; silicon; transmission line theory; Si; Si RFIC; buried diffusions effect; full-wave analysis; generalized equivalent circuit; homogenous buried diffusions; isolation performance improvement; localized buried diffusions; longitudinal couplings; metallic losses; microstrip coupled lines; substrate resistivity; transverse couplings; Attenuation; Conductivity; Coupling circuits; Dielectric losses; Dielectric substrates; Doping; Equivalent circuits; Microstrip; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Microwave Symposium Digest, 2001 IEEE MTT-S International
Conference_Location :
Phoenix, AZ, USA
Print_ISBN :
0-7803-6538-0
DOI :
10.1109/MWSYM.2001.967115
