Fullwave analysis of transverse and longitudinal couplings in silicon RFIC. Effect of buried diffusions

Author

Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P.

Author_Institution

ENSEEIHT, Toulouse, France

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1233

Abstract

Couplings in Si based RFICs result from the combination of the effects of the substrate resistivity, homogenous and localized buried diffusions as well as metallic losses. A fullwave analysis is performed and longitudinal and transverse coupling coefficients are defined from a generalized equivalent circuit. Concurrently, considerable improvement of isolation performances are demonstrated by inserting localized buried diffusions.

Keywords

UHF integrated circuits; coupled transmission lines; diffusion barriers; doping profiles; elemental semiconductors; equivalent circuits; integrated circuit interconnections; integrated circuit modelling; isolation technology; microstrip lines; silicon; transmission line theory; Si; Si RFIC; buried diffusions effect; full-wave analysis; generalized equivalent circuit; homogenous buried diffusions; isolation performance improvement; localized buried diffusions; longitudinal couplings; metallic losses; microstrip coupled lines; substrate resistivity; transverse couplings; Attenuation; Conductivity; Coupling circuits; Dielectric losses; Dielectric substrates; Doping; Equivalent circuits; Microstrip; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967115

Filename

967115