Q-enhancement of spiral inductor with N/sup +/-diffusion patterned ground shields

Author

Chen, Y.E. ; Bien, D. ; Heo, D. ; Laskar, J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

2001

fDate

20-24 May 2001

Firstpage

1289

Abstract

This paper discusses the quality factor enhancement by employing different patterned ground shields underneath the simple spiral inductor in a commercial BiCMOS technology. The effectiveness of the patterned ground shield technique depends heavily on the counter-effects between the reduction of substrate loss and the increase of parasitic capacitance. With proper choice of the shielding layer, the quality factor can achieve 21% enhancement for a 5-nH spiral inductor. The n/sup +/-diffusion layer is found to be the most effective layer for the patterned ground shield technique due to less associated parasitic capacitance.

Keywords

BiCMOS analogue integrated circuits; Q-factor; UHF integrated circuits; electromagnetic shielding; inductors; RFIC; commercial BiCMOS technology; equivalent circuit; inductor model; n/sup +/-diffusion layer; on-chip inductors; parasitic capacitance increase; patterned ground shields; quality factor enhancement; spiral inductor; substrate loss reduction; BiCMOS integrated circuits; Capacitors; Degradation; Inductance; Inductors; Q factor; Radio frequency; Reflection; Resistors; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2001 IEEE MTT-S International

Conference_Location

Phoenix, AZ, USA

ISSN

0149-645X

Print_ISBN

0-7803-6538-0

Type

conf

DOI

10.1109/MWSYM.2001.967129

Filename

967129