DocumentCode
3757487
Title
Stranski-Krastanov model grown ZnO thin films
Author
Yafeng Li;Renjie Jia;Wancheng Zhang;Moucui Ni;Zhijun Wang
Author_Institution
Physics college, Jilin University, Changchun, China
fYear
2015
Firstpage
286
Lastpage
289
Abstract
The induced growth of ZnO thin film by crystallized amorpous ZnO as seed crystalline at 80°C has been studied. In order to the better understanding of the growth mechanism of ZnO thin films, as a comparison, we respectively prepared the ZnO thin films at 80°C and 100°C for 30h (both of them). The results of AFM show that the sample surface prepared at 100°C was more rough than that prepared at 80°C. We mainly studied the growth model of ZnO thin films. Through theoretical analysis and modeling ideas, we found that the growth pattern is the Stranski-Krastanov (SK) model, and we also give schematic diagram of the seed crystal induced low temperature self assembly growth of ZnO thin films on c-plane (0001) substrates.
Keywords
"Zinc oxide","II-VI semiconductor materials","Films","Crystals","Substrates","Surface treatment","Plasma temperature"
Publisher
ieee
Conference_Titel
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2015 International Conference on
Type
conf
DOI
10.1109/3M-NANO.2015.7425463
Filename
7425463
Link To Document