DocumentCode :
3757487
Title :
Stranski-Krastanov model grown ZnO thin films
Author :
Yafeng Li;Renjie Jia;Wancheng Zhang;Moucui Ni;Zhijun Wang
Author_Institution :
Physics college, Jilin University, Changchun, China
fYear :
2015
Firstpage :
286
Lastpage :
289
Abstract :
The induced growth of ZnO thin film by crystallized amorpous ZnO as seed crystalline at 80°C has been studied. In order to the better understanding of the growth mechanism of ZnO thin films, as a comparison, we respectively prepared the ZnO thin films at 80°C and 100°C for 30h (both of them). The results of AFM show that the sample surface prepared at 100°C was more rough than that prepared at 80°C. We mainly studied the growth model of ZnO thin films. Through theoretical analysis and modeling ideas, we found that the growth pattern is the Stranski-Krastanov (SK) model, and we also give schematic diagram of the seed crystal induced low temperature self assembly growth of ZnO thin films on c-plane (0001) substrates.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Films","Crystals","Substrates","Surface treatment","Plasma temperature"
Publisher :
ieee
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2015 International Conference on
Type :
conf
DOI :
10.1109/3M-NANO.2015.7425463
Filename :
7425463
Link To Document :
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