• DocumentCode
    3757487
  • Title

    Stranski-Krastanov model grown ZnO thin films

  • Author

    Yafeng Li;Renjie Jia;Wancheng Zhang;Moucui Ni;Zhijun Wang

  • Author_Institution
    Physics college, Jilin University, Changchun, China
  • fYear
    2015
  • Firstpage
    286
  • Lastpage
    289
  • Abstract
    The induced growth of ZnO thin film by crystallized amorpous ZnO as seed crystalline at 80°C has been studied. In order to the better understanding of the growth mechanism of ZnO thin films, as a comparison, we respectively prepared the ZnO thin films at 80°C and 100°C for 30h (both of them). The results of AFM show that the sample surface prepared at 100°C was more rough than that prepared at 80°C. We mainly studied the growth model of ZnO thin films. Through theoretical analysis and modeling ideas, we found that the growth pattern is the Stranski-Krastanov (SK) model, and we also give schematic diagram of the seed crystal induced low temperature self assembly growth of ZnO thin films on c-plane (0001) substrates.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Films","Crystals","Substrates","Surface treatment","Plasma temperature"
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2015.7425463
  • Filename
    7425463