DocumentCode :
3757501
Title :
Transform process study of amorphous ZnO/nanocrystalline ZnO
Author :
Wancheng Zhang;Renjie Jia;Yafeng Li;Moucui Ni;Zhijun Wang
Author_Institution :
Physics college Jilin University Changchun, China
fYear :
2015
Firstpage :
45
Lastpage :
48
Abstract :
The transforming process of amorphous ZnO/nanocrystalline ZnO was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra. XRD and TEM indicate that the amorphous ZnO gradually transformed to nanocrystalline ZnO and the nanocrystalline ZnO from ~2.3nm to ~21nm were prepared following the increase of reaction temperature. Ultraviolet (UV) PL illuminates there is an obvious quantum size effect in the samples. Visible PL is different with previous reports. Research indicates the interface between amorphous ZnO and nanocrystalline ZnO is the reason of visible emission. The results presented herein can enrich amorphous and crystalline semiconductor theory and explore the application of amorphous ZnO and nanocrystalline ZnO.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Transforms","X-ray scattering","Temperature dependence","Temperature measurement","X-ray diffraction"
Publisher :
ieee
Conference_Titel :
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2015 International Conference on
Type :
conf
DOI :
10.1109/3M-NANO.2015.7425477
Filename :
7425477
Link To Document :
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