• DocumentCode
    3757501
  • Title

    Transform process study of amorphous ZnO/nanocrystalline ZnO

  • Author

    Wancheng Zhang;Renjie Jia;Yafeng Li;Moucui Ni;Zhijun Wang

  • Author_Institution
    Physics college Jilin University Changchun, China
  • fYear
    2015
  • Firstpage
    45
  • Lastpage
    48
  • Abstract
    The transforming process of amorphous ZnO/nanocrystalline ZnO was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra. XRD and TEM indicate that the amorphous ZnO gradually transformed to nanocrystalline ZnO and the nanocrystalline ZnO from ~2.3nm to ~21nm were prepared following the increase of reaction temperature. Ultraviolet (UV) PL illuminates there is an obvious quantum size effect in the samples. Visible PL is different with previous reports. Research indicates the interface between amorphous ZnO and nanocrystalline ZnO is the reason of visible emission. The results presented herein can enrich amorphous and crystalline semiconductor theory and explore the application of amorphous ZnO and nanocrystalline ZnO.
  • Keywords
    "Zinc oxide","II-VI semiconductor materials","Transforms","X-ray scattering","Temperature dependence","Temperature measurement","X-ray diffraction"
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2015.7425477
  • Filename
    7425477