Planar silicon light emitting sources in standard 1.2 and 2 micron CMOS technology

Author

Snyman, L.W. ; Aharoni, H. ; du Plessis, M. ; Marais, J.K.

Author_Institution

Dept. of Electr., Electron. & Comput. Eng., Pretoria Univ., South Africa

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

Three structures of silicon light emitting sources are described, each presenting higher electrical-to-optical conversion efficiency. The advantage of these structures lay in the fact that they were all fabricated using conventional standard VLSI technology, without any alternation of the processing procedure.

Keywords

CMOS integrated circuits; VLSI; avalanche breakdown; elemental semiconductors; integrated optoelectronics; light emitting diodes; semiconductor device breakdown; silicon; 1.2 micron; 2 micron; EO integrated signal processing circuits; Si; bonding pad; electrical-optical conversion efficiency; high packing density; lateral breakdown; on-chip integration; optical waveguides; planar shallow n/sup +/p junction; planar silicon light emitting sources; reverse breakdown avalanche; standard CMOS technology; standard VLSI; Africa; CMOS technology; Integrated circuit technology; Integrated circuit yield; Light sources; Optical devices; Optical signal processing; Silicon; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967750

Filename

967750