Title :
Planar silicon light emitting sources in standard 1.2 and 2 micron CMOS technology
Author :
Snyman, L.W. ; Aharoni, H. ; du Plessis, M. ; Marais, J.K.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Pretoria Univ., South Africa
Abstract :
Three structures of silicon light emitting sources are described, each presenting higher electrical-to-optical conversion efficiency. The advantage of these structures lay in the fact that they were all fabricated using conventional standard VLSI technology, without any alternation of the processing procedure.
Keywords :
CMOS integrated circuits; VLSI; avalanche breakdown; elemental semiconductors; integrated optoelectronics; light emitting diodes; semiconductor device breakdown; silicon; 1.2 micron; 2 micron; EO integrated signal processing circuits; Si; bonding pad; electrical-optical conversion efficiency; high packing density; lateral breakdown; on-chip integration; optical waveguides; planar shallow n/sup +/p junction; planar silicon light emitting sources; reverse breakdown avalanche; standard CMOS technology; standard VLSI; Africa; CMOS technology; Integrated circuit technology; Integrated circuit yield; Light sources; Optical devices; Optical signal processing; Silicon; Testing; Very large scale integration;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.967750
