A novel fast speed Lateral IGBT

Fast speed Lateral Insulated-Gate Bipolar Transistors with a embedded-resistance-controlled split anode (Split-LIGBTs) are proposed and discussed. New anode concept is the ideal combination between the conventional anode part and the embedded-resistance-controlled anode part, which can make the new Split-LIGBTs achieve fast speed in turn-off state and high current handling capability in on-state, simultaneously. And the embedded-resistance-controlled anode structure can also effectively suppress snapback in conducting I–V characteristics. As numerical simulations shown, the proposed Split-LIGBTs have better trade-off between Von & Eoff under both Clamped Inductive Switching (CIS) and resistive load switching. The proposed devices can be fabricated by conventional SOI Power Integrated Circuits (PIC) process utilizing Dielectric Isolation (DI) technology.