Optical near-field spectroscopy of semiconductor nano-structures

Author

Matsuda, K. ; Saiki, T. ; Saito, H. ; Nishi, K. ; Nomura, S. ; Aoyagi, Y.

Author_Institution

Kanagawa Acad. of Sci. & Technol., Japan

Volume

1

fYear

2001

fDate

15-19 July 2001

Abstract

The spatial distribution of electron density modulated by an external lateral confinement potential is directly imaged, indicating the formation of a periodic quantum dot array. We describe PL microscopy and spectroscopy of modulation doped GaAs-GaAlAs quantum well structures using near-field scanning optical microscopy to image the electron density distribution modulated by an external bias voltage.

Keywords

III-V semiconductors; aluminium compounds; electron density; gallium arsenide; near-field scanning optical microscopy; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; GaAs-GaAlAs; NSOM; PL microscopy; PL spectroscopy; electron density distribution; external bias voltage; external lateral confinement potential; lateral statistical potential; modulation doped GaAs-GaAlAs quantum well structures; near-field scanning optical microscope; optical near-field spectroscopy; periodic quantum dot array; spatial PL intensity mapping; Electrons; Gallium arsenide; Optical fibers; Optical films; Optical microscopy; Probes; Quantum dots; Spatial resolution; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.967796

Filename

967796