Title :
Characterisation of 10 kV 10 A SiC MOSFET
Author :
Emanuel-Petre Eni;Bogdan Ioan Incau;Tamas Kerekes;Remus Teodorescu;Stig Munk-Nielsen
Author_Institution :
Department of Energy Technology, Aalborg University, Denmark
Abstract :
The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting behavior at elevated temperatures, where at turn-on the switching speeds become faster, thus turn-on losses become smaller, and opposite at turn-off.
Keywords :
"Silicon carbide","Logic gates","Temperature measurement","MOSFET","Temperature","Voltage measurement","Silicon"
Conference_Titel :
Electrical Machines & Power Electronics (ACEMP), 2015 Intl Conference on Optimization of Electrical & Electronic Equipment (OPTIM) & 2015 Intl Symposium on Advanced Electromechanical Motion Systems (ELECTROMOTION), 2015 Intl Aegean Conference on
DOI :
10.1109/OPTIM.2015.7427016
