Title :
LF and HF noise of microwave devices
Author :
A. Jelenski;L. Dobrzanski;W. Wiatr
Author_Institution :
Inst. Technol. Materialow Elektronicznych, Warsaw, Poland
Abstract :
In this paper the results of an investigation of substrate and surface treatment on LF and HF noise performances of GaAs FETs and Schottky diodes are described. They show that the improvement of LF noise characteristics leads in general to the improvement of HF noise at low current densities, where hot electron noise is negligible.
Keywords :
"Low-frequency noise","Hafnium","Microwave devices","Frequency","Schottky diodes","Gallium arsenide","Impedance","Manufacturing","Chromium","Noise level"
Conference_Titel :
Microwaves and Radar, 1998. MIKON ´98., 12th International Conference on
Print_ISBN :
83-906662-0-0
DOI :
10.1109/MIKON.1998.742816
