• DocumentCode
    3758434
  • Title

    Dependency of base transit time on process parameters: An analytical simulation of GaAsBi based HBT

  • Author

    Farhana Afrin;Twisha Titirsha

  • Author_Institution
    Department of Electrical, Electronic and Communication Engineering, Military Institute of Science and Technology, Dhaka, Bangladesh
  • fYear
    2015
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAsBi based HBT in accordance with its dependency of transit time on various process parameters. Using MATLAB simulation generalized base transit time equation is implemented by varying a set of parameters for the prediction of its application in semiconductor filed. A suitable doping concentration of Bismuth is chosen for the proposed model to forecast an ideal and optimized HBT model with the defined substrate materials.
  • Keywords
    "Heterojunction bipolar transistors","Mathematical model","Gallium arsenide","Doping","Bismuth","Photonic band gap","Semiconductor process modeling"
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Electronic Engineering (ICEEE), 2015 International Conference on
  • Print_ISBN
    978-1-5090-1939-7
  • Type

    conf

  • DOI
    10.1109/CEEE.2015.7428231
  • Filename
    7428231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3758434